tc75s58afe/afc 2009-01-16 1 toshiba cmos linear integrated ci rcuit silicon monolithic tc75s58afe,TC75S58AFC single comparator (open-drain output) the tc75s58afe and TC75S58AFC are cmos general-purpose single comparators. the devices can operate from a single supply voltage and are designed for a lower supply-current than conventional general-purpose bipolar comparators. the output is designed for open-drain output an d can supply a higher voltage than the power supply. therefore, it is possible to pull-up the voltage to a level higher than that of the power supply. the open-drain output can be wir ed-or with another open-drain output circuit. * output voltage should not exceed the maximum rating. feature ? low supply current: i dd = 10 a (typ.) ? single power supply operation ? wide common mode input : v ss to v dd ? 0.9 v ? open-drain output circuit ? low input bias current ? small package marking (top view) pin assignment (top view) tc75s58afe TC75S58AFC tc75s58afe TC75S58AFC cson6-p-0.45 weight son5-p-0.50 : 0.003 g (typ.) cson6-p-0.45 : 0.002 g (typ.) v dd 5 in ( +) 4 1 3 v ss 2 out in ( ?) 6 5 4 1 2 3 in (-) v ss in (+) out v dd nc t g 6 5 4 1 2 3 marking monthly indication t g 4 5 1 2 3 tc75s58afe TC75S58AFC
tc75s58afe/afc 2009-01-16 2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit supply voltage v dd , v ss 3.5 or 7 v differential input voltage dv in 7 v input voltage v in v ss to v dd v output current i o 35 ma output voltage v o v ss to v ss + 7 v tc75s58afe 100 power dissipation p d TC75S58AFC 100 (note1) mw operating temperature t opr ?40 to 85 c storage temperature t stg ?55 to 125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note: due to the cmos structure, this device may be suscept ible to latch-up . to prevent latch-up, please take the following precautions; ? ensure that no input pin voltage level ever exceeds vdd or drops below vss. in addition, check the power-on timing. ? do not subject the device to excessive noise. ( note 1): fr4 in board implementation: (25.4mm 25.4mm 1.6t, cu pad: 0.4mm 2 )
tc75s58afe/afc 2009-01-16 3 electrical characteristics (v dd = 5 v, v ss = gnd, ta = 25c) characteristics symbol test circuit test condition min typ. max unit input offset voltage v io ? ? ? 1 7 mv input offset current i io ? ? ? 1 ? pa input bias current i i ? ? ? 1 ? pa common mode input voltage cmv in ? ? 0 ? 4.1 v supply current i dd (note) ? ? ? 11 22 a voltage gain g v ? ? ? 94 ? db sink current i sink ? v ol = 0.5 v 13 25 ? ma output leakage current i leak ? v dd = 5 v , v o = 5 v ? 5 ? na off-state leakage current i off ? v dd = 0 v , v o = 5 v ? 5 ? na output-low voltage v ol ? i sink = 5.0 ma ? 0.1 0.3 v operating supply voltage range v dd ? ? 1.8 ? 7.0 v t plh (1) ? over drive = 100 mv ? 800 ? propagation delay (turn on) t plh (2) ? ttl step input ? 620 ? ns t phl (1) ? over drive = 100 mv ? 230 ? propagation delay (turn off) t phl (2) ? ttl step input ? 350 ? ns t tlh ? over drive = 100 mv ? 190 ? response time t thl ? over drive = 100 mv ? 6 ? ns electrical characteristics (v dd = 3 v, v ss = gnd, ta = 25c) characteristics symbol test circuit test condition min typ. max unit input offset voltage v io ? ? ? 1 7 mv input offset current i io ? ? ? 1 ? pa input bias current i i ? ? ? 1 ? pa common mode input voltage cmv in ? ? 0 ? 2.1 v supply current i dd (note) ? ? ? 10 20 a sink current i sink ? v ol = 0.5 v 6 18 ? ma output leakage current i leak ? v dd = 3 v , v o = 3 v ? 5 ? na off-state leakage current i off ? v dd = 0 v , v o = 3 v ? 5 ? na output-low voltage v ol ? i sink = 5.0 ma ? 0.15 0.35 v propagation delay (turn on) t plh ? over drive = 100 mv ? 590 ? ns propagation delay (turn off) t phl ? over drive = 100 mv ? 230 ? ns t tlh ? over drive = 100 mv ? 170 ? response time t thl ? over drive = 100 mv ? 5 ? ns note: the current consumption of this device increases as its operating frequency increases. note that the power dissipation should not exceed the allowable power.
tc75s58afe/afc 2009-01-16 4 i dd ? f frequency f (khz) supply current i dd ( a) 1000 1 0.001 10 100 0.01 0.1 1 10 100 1000 v dd = 3 v v ss = gnd ta = 25c i dd ? f frequency f (khz) supply current i dd ( a) 1000 1 0.001 10 100 0.01 0.1 1 10 100 1000 v dd = 5 v v ss = gnd ta = 25c
tc75s58afe/afc 2009-01-16 5 this data was obtained from an unmounted standalone ic. if the ic is mounted on a pcb, its power dissipation will be greater. note that, depending on the pcb?s thermal characteristics, the curves may differ substantially from those shown. p d ? ta power dissipation p d (mw) 300 ambient temperature ta (c) 200 100 0 ? 40 0 40 80 120 sink current i sink (ma) v ol ? i sink output-low voltage v ol (v) 0.0 0 3.0 2.0 1.0 10 20 30 40 v dd = 3 v v ss = gnd ta = 25c 0.5 1.5 2.5 5 15 25 35 3.0 sink current i sink (ma) output-low voltage v ol (v) v ol ? i sink 5.0 0.0 4.0 v dd = 5 v v ss = gnd ta = 25c 0.5 1.0 1.5 2.0 2.5 3.5 4.5 0 10 20 30 40 5 15 25 35
tc75s58afe/afc 2009-01-16 6 package dimension weight: 0.003 g (typ.)
tc75s58afe/afc 2009-01-16 7 package dimension cson6-p-0.45 weight: 0.002 g (typ.)
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